Crystalline film devices, apparatuses for and methods of fabrication
US8357242B2 · kind B2 · utility
3Cited by
17References
3Claims
0Family size
Inventors
Key dates
| Filing date | Apr 28, 2008 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Aug 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.