Semiconductor substrate and methods for the production thereof

US8357944B2 · kind B2 · utility

Assignees

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US
• KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

• Christian Drabe · Dresden, DE
• Alexander Wolter · Dresden, DE
• Roger Steadman · Aachen, DE
• Andreas Bergmann · Berlin, DE
• Gereon Vogtmeier · Aachen, DE
• Ralf Dorscheid · Kerkrade, NL

Key dates

• Filing date: Aug 10, 2006
• Grant date: Jan 22, 2013
• Expiry date: May 14, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/933
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to semiconductor substrates and methods for producing such semiconductor substrates. In this connection, it is the object of the invention to provide semiconductor substrates which can be produced more cost-effectively and with which a high arrangement density as well as good electrical conductivity and closed surfaces can be achieved. In accordance with the invention, an electrically conductive connection is guided from its front side through the substrate up to the rear side. The electrically conductive connection is completely surrounded from the outside. The insulator is formed by an opening which is filled with material. The inner wall is provided with a dielectric coating and/or filled with an electrically insulating or conductive material. The electrically conductive connection is formed with a further opening which is filled with an electrically conductive material and is arranged in the interior of the insulator. The openings are formed with step-free inner walls aligned orthogonally to the front side or tapering continuously in the direction of the rear side.