Non-volatile memory semiconductor device

US8357968B2 · kind B2 · utility

Assignee

• RENESAS ELECTRONICS CORPORATION · JP

Inventors

• Hiraku Chakihara · Akishima, JP
• Tsutomu Okazaki · Kawasaki, JP

Key dates

• Filing date: Sep 12, 2009
• Grant date: Jan 22, 2013
• Expiry date: Feb 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/037

Abstract

A non-volatile memory semiconductor device having one end of an electricity supply line ESL arranged over a terminal end TE1 and the other end thereof arranged over a terminal end TE2, the central portion of the electricity supply line ESL being arranged over a dummy part DMY. The terminal end TE1, the terminal end TE2, and the dummy part DMY have substantially the same height, so that most of the electricity supply line ESL arranged from over the terminal end TE1 to over the terminal end TE2 via the dummy part DMY has the same height.