Patent · US Active

Transconductance enhanced RF front-end

US8358991B2 · kind B2 · utility

3Cited by

2References

17Claims

0Family size

Assignee

Broadcom Corporation · US

Inventors

Xinyu Chen · Bellaire, US
Calvin Chen · Irvine, US
John Leete · Tecate Mission Road, US

Key dates

Filing date	Jan 26, 2010
Grant date	Jan 22, 2013
Priority date	—
Expiry date	Mar 26, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH04B1/28
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

Embodiments of an RF receiver front-end are presented herein. In an embodiment, the RF receiver front-end comprises a transconductance LNA, a passive mixer, and a gm-enhanced common-gate buffer. The transconductance LNA is configured to convert an RF voltage signal to an RF current signal and provide the RF current signal at an output. The passive mixer is coupled to the output of the transconductance LNA and is configured to mix the RF current signal with a local oscillator signal to produce a frequency translated current signal. The gm-enhanced common-gate buffer is configured to receive the frequency translated current signal at an input and convert the frequency translated current signal to a frequency translated voltage signal. In an embodiment, the input of the gm-enhanced common-gate buffer is configured to provide a low input impedance to limit a voltage swing of the frequency translated current signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.