Patent · US Active

Manufacturing method of photonic crystal

US8361545B2 · kind B2 · utility

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5References
2Claims
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Key dates

Filing dateJun 1, 2006
Grant dateJan 29, 2013
Priority date
Expiry dateApr 27, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/24942
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.