Patent · US Active

Method of forming optical sensor

US8361818B2 · kind B2 · utility

17Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 1, 2010
Grant dateJan 29, 2013
Priority date
Expiry dateApr 9, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.