Borazine-based resin, process for its production, borazine-based resin composition, insulating film and method for its formation
US8362199B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Jun 1, 2009 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jul 16, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interlayer insulating films 5,7 (insulating films) provided in a memory capacitor cell 8 are formed between a gate electrode 3 and a counter electrode 8C formed on a silicon wafer 1. The interlayer insulating films 5,7 comprise a borazine-based resin, having a specific dielectric constant of no greater than 2.6, a Young's modulus of 5 GPa or greater and a leak current of no greater than 1×10−8 A/cm2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.