Patent · US Active

Method of fabricating semiconductor devices on a group IV substrate with controlled interface properties and diffusion tails

US8362460B2 · kind B2 · utility

2Cited by

13References

19Claims

0Family size

Assignee

Cyrium Technologies Incorporated · CA

Inventors

Norbert Puetz · Niederaußem, DE
Simon Fafard · Mississauga, CA
Bruno J. Riel · Ottawa, CA

Key dates

Filing date	Jan 31, 2012
Grant date	Jan 29, 2013
Priority date	—
Expiry date	Jan 31, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/544
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A multi junction solar cell having epitaxially-deposited III/V compounds on vicinal group IV substrates and method for making same. The solar cell includes an AlAs nucleating layer on a Ge substrate. The group IV substrate contains a p-n junction whose change of characteristics during epitaxial growth of As-containing layers is minimized by the AlAs nucleating layer. The AlAs nucleating layer provides improved morphology of the solar cell and a means to control the position of a p-n junction near the surface of the group IV substrate through diffusion of As and/or P and near the bottom of the III/V structure through minimized diffusion of the group IV element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.