Patent · US Active

Quantum well device

US8362461B2 · kind B2 · utility

1Cited by

5References

20Claims

0Family size

Assignee

Alcatel Lucent · FR

Inventors

Kirk W. Baldwin · New Providence, US
Loren N. Pfeiffer · Morristown, US
Kenneth William West · Morristown, US

Key dates

Filing date	May 28, 2010
Grant date	Jan 29, 2013
Priority date	—
Expiry date	Dec 31, 2030

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y40/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.