Sub-pixel nBn detector

US8362520B2 · kind B2 · utility

Assignee

• Lockheed Martin Corporation · US

Inventors

• Jeffrey Winfield Scott · Tustin, US
• Colin Jones · Aberdeen, GB
• Ernie J. Caine · Lompoc, US
• Charles A. Cockrum · Goleta, US

Key dates

• Filing date: Jun 1, 2011
• Grant date: Jan 29, 2013
• Expiry date: Jun 1, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A method of making a two-dimensional detector array (and of such an array) comprising, for each of a plurality of rows and a plurality of columns of individual detectors, forming an n-doped semiconductor photo absorbing layer, forming a barrier layer comprising one or more of AlSb, AlAsSb, AlGaAsSb, AlPSb, AlGaPSb, and HgZnTe, and forming an n-doped semiconductor contact area.