Field effect device having a channel of nanofabric and methods of making same
US8362525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2006 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Dec 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Field effect devices having channels of nanofabric and methods of making same. A nanotube field effect transistor is made to have a substrate, and a drain region and a source region in spaced relation relative to each other. A channel region is formed from a fabric of nanotubes, in which the nanotubes of the channel region are substantially all of the same semiconducting type of nanotubes. At least one gate is formed in proximity to the channel region so that the gate may be used to modulate the conductivity of the channel region so that a conductive path may be formed between the drain and source region. Forming a channel region includes forming a fabric of nanotubes in which the fabric has both semiconducting and metallic nanotubes and the fabric is processed to remove substantially all of the metallic nanotubes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.