Semiconductor device
US8362556B2 · kind B2 · utility
4Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Feb 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate with one or more active regions and an isolation layer formed to surround an active region and to extend deeper into the substrate than the one or more active regions. The semiconductor further includes a gate electrode, which covers a portion of the active region, and which has one end; portion thereof extending over the isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.