Thin film transistor, method for manufacturing the same, and semiconductor device
US8362563B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2012 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jul 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.