Isolated epitaxial modulation device
US8362564B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2011 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jun 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.