Forming radio frequency integrated circuits
US8362599B2 · kind B2 · utility
23Cited by
0References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2009 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Apr 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of forming a radio frequency integrated circuit (RFIC) is provided. The RFIC comprises one or more electronic devices formed in a semiconductor substrate and one or more passive devices on a dielectric substrate, arranged in a stacking manner. Electrical shield structure is formed in between to shield electronic devices in the semiconductor substrate from the passive devices in the dielectric substrate. Vertical through-silicon-vias (TSVs) are formed to provide electrical connections between the passive devices in the dielectric substrate and the electronic devices in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.