Microelectronic devices including multiple through-silicon via structures on a conductive pad and methods of fabricating the same
US8362621B2 · kind B2 · utility
14Cited by
2References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2009 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Dec 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic structure includes a conductive pad on a substrate. The conductive pad includes first and second openings extending therethrough. A first conductive via on the conductive pad extends through the first opening in the conductive pad into the substrate. A second conductive via on the conductive pad adjacent the first conductive via extends through the second opening in the conductive pad into the substrate. At least one of the conductive vias may be electrically isolated from the conductive pad. Related devices and fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.