High speed low power magnetic devices based on current induced spin-momentum transfer
US8363465B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2011 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Mar 4, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5607
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high speed and low power method to control and switch the magnetization direction and/or helicity of a magnetic region in a magnetic device for memory cells using spin polarized electrical current. The mapetic device comprises a reference magnetic layer with a fixed magnetic helicity and/or magnetization direction and a free magnetic layer with a changeable magnetic helicity and/or magnetization direction. The fixed magnetic layer and the free magnetic layer are preferably separated by a non-magnetic layer. The fixed and free magnetic layers may have magnetization directions at a substantially nonzero angle relative to the layer normal. A current can be applied to the device to induce a torque that alters the magnetic state of the device so that it can act as a magnetic memory for writing information. The resistance, which depends on the magnetic state of the device, is measured to read out the information stored in the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.