Dopant profile control for high speed silicon-based optical modulators
US8363986B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jul 23, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A high speed silicon-based optical modulator with control of the dopant profiles in the body and gate regions of the device reduces the series resistance of the structure without incurring substantial optical power loss. That is, the use of increased dopant values in areas beyond the active region will allow for the series resistance to be reduced (and thus increase the modulating speed of the device) without incurring too large a penalty in signal loss. The dopant profiles within the gate and body regions are tailored to exhibit an intermediate value between the high dopant concentration in the contact areas and the low dopant concentration in the carrier integration window area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.