Patent · US Active

Sub-micron planar lightwave devices formed on an SOI optical platform

US8363995B2 · kind B2 · utility

6Cited by

3References

45Claims

0Family size

Inventors

Prakash Gothoskar · Allentown, US
Margaret Ghiron · Allentown, US
Robert Keith Montgomery · Easton, US
Vipulkumar Patel · Emmaus, US
Kalpendu Shastri · Orefield, US
Soham Pathak · Allentown, US
Katherine A. Yanushefski · Emmaus, US

Key dates

Filing date	Mar 8, 2011
Grant date	Jan 29, 2013
Priority date	—
Expiry date	Mar 8, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG02B2006/12173
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A set of planar, two-dimensional optical devices is able to be created in a sub-micron surface layer of an SOI structure, or within a sub-micron thick combination of an SOI surface layer and an overlying polysilicon layer. Conventional masking/etching techniques may be used to form a variety of passive and optical devices in this SOI platform. Various regions of the devices may be doped to form the active device structures. Additionally, the polysilicon layer may be separately patterned to provide a region of effective mode index change for a propagating optical signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.