Method of manufacturing semiconductor light emitting element
US8367442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2009 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC —)General
Abstract
A method of manufacturing the semiconductor light emitting element comprises a semiconductor layer forming step of forming the multilayered nitride semiconductor layer on the first wafer having a transparent property; a bonding step of bonding the multilayered nitride semiconductor layer to the first wafer; a groove forming step of forming the groove extending from the lower surface of the first wafer to the multilayered nitride semiconductor layer; a light applying step of applying a first light to the lower surface of the multilayered nitride semiconductor layer through the first wafer to reduce a bonding force between the multilayered nitride semiconductor layer and the first wafer; a separating step of separating the first wafer from the multilayered nitride semiconductor layer; and a cutting step of cutting the second wafer along the groove to divide into a plurality of the semiconductor light emitting element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.