Semiconductor light-emitting apparatus and method of manufacturing the same
US8367449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2011 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm−3. The active layer is made of (AlyGa1-y)xIn1-xP (0<x≦1, 0≦y≦1). The light-emitting apparatus also includes a third clad layer, and a second-conducting-type semiconductor layer made of Ga1-xInxP (0≦x<1). If d is the layer thickness of the second clad layer (nm) and Nd1 is the average dopant concentration of the second clad layer (cm−3), then d≧1.2×Nd1×10−15+150 is satisfied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.