Organic semiconductor interface preparation
US8367459B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2010 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Dec 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/611
Abstract
A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H2 or N2 plasma, a self-assembled organic monolayer is formed overlying the S/D electrodes. Finally, an active organic semiconductor layer is formed over the S/D electrodes and gate dielectric channel interface. The OTFT may be exposed to plasma either before or after the formation of the S/D electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.