Large-scale fabrication of vertically aligned ZnO nanowire arrays

US8367462B2 · kind B2 · utility

Assignee

• Georgia Tech Research Corporation · US

Inventors

• Zhong Lin Wang · Marietta, US
• Suman Das · Ann Arbor, US
• Sheng Xu · Katy, US
• Dajun Yuan · San Diego, US
• Rui Guo · 安丰镇, CN
• Yaguang Wei · Pleasanton, US
• Wenzhuo Wu · West Lafayette, US

Key dates

• Filing date: Apr 21, 2011
• Grant date: Feb 5, 2013
• Expiry date: Oct 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/823
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for growing a nanowire array, a photoresist layer is placed onto a nanowire growth layer configured for growing nanowires therefrom. The photoresist layer is exposed to a coherent light interference pattern that includes periodically alternately spaced dark bands and light bands along a first orientation. The photoresist layer exposed to the coherent light interference pattern along a second orientation, transverse to the first orientation. The photoresist layer developed so as to remove photoresist from areas corresponding to areas of intersection of the dark bands of the interference pattern along the first orientation and the dark bands of the interference pattern along the second orientation, thereby leaving an ordered array of holes passing through the photoresist layer. The photoresist layer and the nanowire growth layer are placed into a nanowire growth environment, thereby growing nanowires from the nanowire growth layer through the array of holes.