Oxide semiconductor device with oxide semiconductor layers of different oxygen concentrations and method of manufacturing the same
US8368067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Aug 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/80517
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.