Semiconductor device with capacitor disposed on gate electrode
US8368084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2010 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
In an embodiment, provided is a semiconductor device in which a normally-on type FET; a capacitor having one electrode electrically connected to a gate of the FET and the other electrode electrically connected to an input terminal; and a diode having an anode electrode electrically connected to the gate of the FET and a cathode electrode electrically connected to a source of the FET are formed on the same chip on which the FET is formed. Also, the capacitor may have a structure in which an insulation film such as a dielectric substance is formed on a gate drawn electrode of the FET, and a metallic layer is formed on the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.