Manufacturing method and integrated circuit having a light path to a pixilated element

US8368105B2 · kind B2 · utility

Assignee

• NXP B.V. · NL

Inventors

• Viet Nguyen Hoang · Leuven, BE
• Radu Surdeanu · Roosbeek, BE
• Benoit Bataillou · Evergem, BE

Key dates

• Filing date: Mar 9, 2009
• Grant date: Feb 5, 2013
• Expiry date: Nov 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/811

Abstract

The present invention relates to a manufacturing method of an integrated circuit (IC) comprising a substrate (10) comprising a pixelated element (12) and a light path (38) to the pixelated element (12). The IC comprises a first dielectric layer (14) covering the substrate (10) but not the pixilated element (12), a first metal layer (16) covering a part of the first dielectric layer (14), a second dielectric layer (18) covering a further part of first dielectric layer (14), a second metal layer (20) covering a part of the second dielectric layer (18) and extending over the pixelated element (12) and a part of the first metal layer (16), the first metal layer (16) and the second metal layer (20) forming an air-filled light path (38) to the pixelated element (12). The air-filled light path (38) is formed by creation of holes in the first dielectric layer (14) and the second dielectric layer (18), filling the holes with sacrificial materials, and removal of the sacrificial materials after deposition and patterning of the second metal layer (20). This yields an IC having a low-loss light path to the pixelated element (12). The light path may act as a color filter, e.g. a Fabry-Perot col…