Solid-state image capturing device, method of manufacturing solid-state image capturing device, and image capturing apparatus
US8368161B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2010 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Jul 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A solid-state image capturing device includes, in a semiconductor substrate, a photoelectric conversion section which performs photoelectric conversion on incident light to obtain signal charges; a pixel transistor section which outputs the signal charges generated in the photoelectric conversion section; a peripheral circuit section which is formed in the periphery of a pixel section including the photoelectric conversion section and the pixel transistor section; and isolation areas which electrically separate the photoelectric conversion section, the pixel transistor section, and the peripheral circuit section from each other. The isolation areas in the periphery of the pixel transistor section each have an insulating section formed higher than a surface of the semiconductor substrate. A first gate electrode of a transistor of the pixel transistor section is formed between the insulating sections and on the semiconductor substrate with a gate insulating film interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.