Voltage distribution for controlling CMOS RF switch
US8368463B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2010 |
| Grant date | Feb 5, 2013 |
| Priority date | — |
| Expiry date | Dec 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/7215
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed are voltage distribution device and method for controlling CMOS-based devices for switching radio frequency (RF) signals. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, various bias voltages applied to such a CMOS RF switch can be facilitated by a voltage distribution component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.