Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same
US8372303B2 · kind B2 · utility
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3References
8Claims
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Key dates
| Filing date | Jul 26, 2007 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jul 26, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.