Method for chemical sensor fabrication and related sensor
US8372674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Mar 14, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method includes forming a hole in a first wafer and forming a sensor structure in or on a second wafer. The second wafer includes a piezoelectric material. The method also includes bonding the first wafer and the second wafer, where the sensor structure is located between the wafers. The method further includes forming a sensing layer by depositing material between the wafers through the hole in the first wafer. The sensing layer could be formed by depositing a sensing layer material on the second wafer using direct printing. Also, the hole through the first wafer could be formed using ultrasonic milling, micro-drilling, laser drilling, wet etching, and/or plasma etching. A spacer material could be used to bond the wafers together, such as frit glass paste or an organic adhesive. Trenches could be formed in the first wafer to facilitate easier separation of multiple sensors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.