Method and system for selenization in fabricating CIGS/CIS solar cells
US8372684B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | May 7, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.