Patent · US Active

System, method and apparatus for forming multiple layers in a single process chamber

US8372687B2 · kind B2 · utility

0Cited by
2References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 16, 2011
Grant dateFeb 12, 2013
Priority date—
Expiry dateFeb 16, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for forming multiple layers in a single process chamber includes placing a substrate in the process chamber having multiple processing sources and iteratively forming a copper indium gallium selenium (CIGS) including forming multiple relatively thin CIGS layers including forming a copper indium gallium (CIG) layer on the substrate, the CIG layer having a thickness of between less than about 50 angstroms and about 200 angstroms, forming a selenium layer on the CIG layer, the selenium layer having a thickness of between less than about 50 angstroms and about 200 angstroms and heating the substrate, the CIG layer and the selenium layer. A processing chamber system is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.