Semiconductor device, its manufacturing method, and sputtering target material for use in the method
US8372745B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 24, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Feb 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device provided on an insulating film with a wiring includes the insulating film containing silicon, a wiring main body formed of copper in a groove-like opening disposed in the insulating film, and a barrier layer formed between the wiring main body and the insulating film and made of an oxide containing Cu and Si and Mn.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.