Selective etching of silicon dioxide compositions
US8372756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Apr 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for selectively etching a material comprising SiO2 over silicon, the method comprising the steps of: placing a silicon substrate comprising a layer of a material comprising SiO2 within a reactor chamber equipped with an energy source; creating a vacuum within the chamber; introducing into the reactor chamber a reactive gas mixture comprising a fluorine compound, a polymerizable fluorocarbon, and an inert gas, wherein the reactive gas mixture is substantially free of added oxygen; activating the energy source to form a plasma activated reactive etching gas mixture within the chamber; and selectively etching the material comprising SiO2 preferentially to the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.