Patent · US Active

Infrared photodetector

US8373155B2 · kind B2 · utility

3Cited by

2References

10Claims

0Family size

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Inventors

Toshihiro Okamura · Shizuoka, JP
Mitsuhiro Nagashima · Suginami, JP
Michiya Kibe · Sagamihara, JP
Hironori Nishino · Kawasaki, JP
Yasuhito Uchiyama · Kawasaki, JP
Yusuke Matsukura · Nagoya, JP

Key dates

Filing date	Aug 3, 2009
Grant date	Feb 12, 2013
Priority date	—
Expiry date	Jun 15, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/544
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.