III-nitride semiconductor light emitting device
US8373174B2 · kind B2 · utility
0Cited by
9References
13Claims
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Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Jun 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
Abstract
The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.