Gate controlled bipolar junction transistor on fin-like field effect transistor (FinFET) structure
US8373229B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2010 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Mar 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
An integrated circuit device is disclosed. An exemplary integrated circuit device includes: a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed over the base portion of the fin structure. The collector portion is a first doped region including a first type dopant, and is coupled with a first terminal for electrically biasing the collector portion. The emitter portion is a second doped region including the first type dopant, and is coupled with a second terminal for electrically biasing the emitter portion. The base portion is a third doped region including a second type dopant opposite the first type, and is coupled with a third terminal for electrically biasing the base portion. The gate structure is coupled with a fourth terminal for electrically biasing the gate structure, such that the gate structure controls a path of current through the base portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.