Transistor and method of manufacturing the same
US8373237B2 · kind B2 · utility
36Cited by
1References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 7, 2009 |
| Grant date | Feb 12, 2013 |
| Priority date | — |
| Expiry date | Oct 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.