Oxide single crystal and method for production thereof, and single crystal wafer
US8377203B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Apr 27, 2006 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An oxide single crystal having a composition represented by RExSi6O1.5x+12 (RE: La, Ce, Pr, Nd, or Sm, x: 8 to 10) is grown by using the Czochralski method such that the crystal growth orientation coincides with the c-axis direction. The solidification rate (the weight of the grown crystal÷the weight of the charged raw material) in the crystal growth is less than 45%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.