System and method for manufacturing polycrystal silicon
US8377208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2011 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Sep 28, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2219/0263
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A polycrystal silicon manufacturing apparatus and a method of manufacturing polycrystal silicon using the same are disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a first pressure sensor configured to measure a pressure of a first area in the reaction pipe; a second pressure sensor configured to measure a pressure of a second area in the reaction pipe; and a particle outlet configured to exhaust polycrystal silicon formed in the reaction pipe outside, when a difference between a first pressure measured by the first pressure sensor and a second pressure measured by the second pressure sensor is a reference pressure value or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.