Thin film transistor and method for manufacturing the same
US8377742B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jul 27, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | May 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.