Thin film transistor, array substrate and method for manufacturing the same

US8377758B2 · kind B2 · utility

Assignee

• Beijing BOE Optoelectronics Technology Co., Ltd. · CN

Inventors

• Xinxin Li · Shanghai, CN
• Wei Wang · Beijing, CN
• Chunping Long · Beijing, CN

Key dates

• Filing date: Sep 23, 2011
• Grant date: Feb 19, 2013
• Expiry date: Sep 23, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6729

Abstract

A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.