Ion implant apparatus and method of ion implantation
US8378317B1 · kind B1 · utility
0Cited by
6References
22Claims
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Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Sep 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/20214
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.