Semiconductor device and method for fabricating the same
US8378335B2 · kind B2 · utility
12Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Apr 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.