Semiconductor device and method of manufacturing semiconductor device
US8378341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2009 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Nov 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/871
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device of the present invention has a first interconnect layer formed over the semiconductor substrate, and a semiconductor element; the first interconnect layer has an insulating layer, and a first interconnect filled in a surficial portion of the insulating layer; the semiconductor element has a semiconductor layer, a gate insulating film, and a gate electrode; the semiconductor layer is positioned over the first interconnect layer; the gate insulating film is positioned over or below semiconductor layer; and the gate electrode is positioned on the opposite side of the semiconductor layer while placing the gate insulating film in between.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.