Semiconductor device and manufacturing method thereof
US8378343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Aug 9, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.