Multi-chip light emitting diode and method for fabricating the same
US8378364B2 · kind B2 · utility
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4References
10Claims
0Family size
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Key dates
| Filing date | Feb 4, 2010 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Jul 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multi-chip light emitting diodes and method for fabricating the same are provided. The multi-chip light emitting diode includes a lead frame including a carrier part. A plurality of chips is disposed on the carrier part, wherein the plurality of chips includes a first chip and a second chip. A first scattering layer is conformally covering the first chip to expose electrodes thereof, wherein the first scattering layer consists of a first scattering material. A second scattering layer is conformally covering the second chip to expose electrodes thereof, wherein the second scattering layer consists of a second scattering material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.