Light-emitting device

US8378373B2 · kind B2 · utility

Assignee

• Huga Optotech Inc. · TW

Inventors

• Tai-Chun Wang · Hsinchu, TW
• Wei-Chih Wen · Hsinchu, TW

Key dates

• Filing date: Jan 5, 2010
• Grant date: Feb 19, 2013
• Expiry date: Apr 23, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/14

Abstract

A light-emitting device includes a substrate; a stacked structure including a first type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first type semiconductor layer, and a second type semiconductor layer positioned on the light-emitting structure, wherein the stacked structure includes a depression exposing the first type semiconductor layer; a first electrode positioned on the first type semiconductor layer in the depression, the first electrode including at least one first pad and at least one first extending wire with one end connected to the first pad; a second electrode positioned on the second type semiconductor layer, the second electrode including at least one second pad and at least one second extending wire with one end connected to the second pad; wherein the distance between the first pad and the second pad is greater than 70% of the width of the light-emitting device.