Semiconductor structure of a display device and method for fabricating the same
US8378404B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 15, 2012 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | May 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/481
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure of a display device and the method for fabricating the same are provided. The semiconductor structure is formed on a substrate having a TFT region and a pixel capacitor region thereon. A TFT, including a gate electrode, a source electrode, a drain electrode, a channel layer, and a gate insulating layer, is formed on the TFT region of the substrate. A pixel capacitor is formed on the pixel capacitor region, wherein the pixel capacitor comprises a bottom electrode formed on a bottom dielectric layer, an interlayer dielectric layer formed on the bottom electrode, a top electrode formed on the interlayer dielectric layer, a contact plug passing through the interlayer dielectric layer and electrically connected to the top and bottom electrodes, a capacitor dielectric layer formed on the top electrode, a transparent electrode formed on the capacitor dielectric layer and electrically connected to the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.