Back-lit image sensor and method of manufacture
US8378440B2 · kind B2 · utility
9Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2009 |
| Grant date | Feb 19, 2013 |
| Priority date | — |
| Expiry date | Jan 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A backside-illuminated image sensor includes photoelectric converters disposed in a front-side of a substrate and arranged to define pixels, back-side interlayer dielectric patterns disposed on the back-side of the substrate over the photoelectric converters, color filters arranged over the back-side interlayer dielectric patterns, and micro-lenses arranged over the color filters, wherein adjacent back-side interlayer dielectric patterns are separated by an intervening gap region having a refractive index less than that of the back-side interlayer dielectric patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.